
4TB Capacity, PCIe Gen 4.0 x4 / 5.0 x2 NVMe 2.0 Interface, Up to 7,250 MB/s Read & 6,300 MB/s Write Support, V-NAND TLC | MZ-V9S4T0BW
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990 EVO Plus Specifications
| Storage | 4TB |
|---|---|
| model | 990 EVO Plus |
| weight | Max 9.0g |
| interface | PCIe® Gen 4.0 x4 / 5.0 x2 NVMe™ 2.0 |
| controller | Samsung in-house Controller |
| application | Client PCs |
| form factor | M.2 (2280) |
| wwn support | Not Supported |
| cache memory | HMB (Host Memory Buffer) |
| trim support | Supported |
| storage memory | Samsung V-NAND TLC |
| dimension wxhxd | 80.15 x 22.15 x 2.38mm |
| sequential read | Up to 7,250 MB/s |
| shipping weight | 0.10 Kg |
| reliability mtbf | 1.5 Million Hours |
| sequential write | Up to 6,300 MB/s |
| shock resistance | 1,500 G & 0.5 ms (Half sine) |
| allowable voltage | 3.3V ± 5% |
| best sellers rank | #32 in Internal SSD |
| s m a r t support | Supported |
| encryption support | AES 256-bit Encryption (Class 0), TCG/Opal, IEEE1667 (Encrypted Drive) |
| model code capacity | MZ-V9S4T0BW (4TB) |
| shipping dimensions | 2.00 cm x 10.00 cm x 14.50 cm |
| random read 4kb qd32 | Up to 1,050,000 IOPS |
| gc garbage collection | Auto Garbage Collection Algorithm |
| operating temperature | 0 - 70°C |
| random write 4kb qd32 | Up to 1,400,000 IOPS |
| power consumption idle | Typical 60mW for all capacities |
| power consumption sleep | Typical 5mW for all capacities |
| average power consumption | Read 5.5W / Write 4.8W |
| device sleep mode support | Yes |
Specifications are compiled from manufacturer and supplier data. Confirm part numbers for compatibility-critical purchases.
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Internal SSD
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